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Biomaterials. 2005, 26: 2947295617 程丙勛. 磁控濺射制備Al膜和Cu膜的結(jié)構(gòu)與性能研究[D]，成都:四川大學，2007，3134附錄A 譯文磁控濺射鍍膜技術(shù)的發(fā)展及應用前言　　磁控濺射原理：電子在電場的作用下加速飛向基片的過程中與氬原子發(fā)生碰撞，電離出大量的氬離子和電子，電子飛向基片。磁力線分布方向不同會對成膜有很大關系。 濺射現(xiàn)象 用帶有幾十電子伏能量的粒子轟擊材料表面時，材料將被激發(fā)為氣態(tài)，利用這種現(xiàn)象可以對材料進行表面的鍍膜、刻蝕、清洗和表面分析。當級聯(lián)碰撞范圍內(nèi)反沖原子密度不高時，動態(tài)反沖原子彼此間的碰撞可以忽略，這就是線性級聯(lián)碰撞。 (二)三極濺射 二極濺射方法雖然簡單，但放電不穩(wěn)定，而且沉積速率低。 與二極濺射相比較，磁控濺射的沉積速率高，基片升溫低，膜層質(zhì)量好，可重復性好，便于產(chǎn)業(yè)化生產(chǎn)。反應磁控濺射廣泛應用于化合物薄膜的大批量生產(chǎn)，這是因為： (1)反應 磁控濺射所用的靶材料 ( 單元素靶或多元素靶 ) 和反應氣體 ( 氧、氮、碳氫化合物等 ) 純度很高，因而有利于制備高純度的化合物薄膜。 (3) 使用圓柱形旋轉(zhuǎn)靶減小絕緣介質(zhì)膜的覆蓋面積。 交流濺射 (脈沖濺射) 的電壓波形可以是對稱的，也可以是不對稱的。非平衡磁控濺射除了具有較高的濺射速率外，能夠向鍍膜區(qū)輸出更多的離子，離子濃度正比于濺射靶的放電電流。由于鏡像靶對兩個靶磁場的相互排斥作用，縱向磁場向真空室壁彎曲，電子在真空室壁上損失掉，進而降低了離子的數(shù)量。電鍍會使鋼發(fā)生氫脆，而且電鍍速度慢，造成環(huán)境污染。長期以來，反應磁控濺射技術(shù)主要用于工具表面鍍制TiN等超硬膜以及建筑玻璃、汽車玻璃、透明導電膜等單層或簡單膜層。 附錄A 外文原文Development and Application of the Technology of Magnetron SputteringForewordMagnetron sputtering principle: electrons accelerated in the electric field toward the substrate with the argon atom collision ionization of argon ions and electrons, toward the substrate. Argon ions accelerated in the electric field under the bombardment of the target, sputtering out a large number of target atoms, was neutral target atoms (or molecules) deposited on the substrate film. Secondary electron in the process of accelerated toward the substrate by the magnetic field Lorenzi magnetic trapped in the plasma region near the target surface, the region a high plasma density, secondary electron in the role of the magnetic field around the target surface in circular motion, the motion path of the electrons is very long, in the course of the campaign with the argon atom impact ionization of argon ion bombardment of targets, after many collisions, the electron energy gradually reduce and get rid of the shackles of the magnetic field lines , away from the target, and ultimately deposited on the substrate. Magnetron sputtering is bound magnetic field and extend the path of movement of electrons, changing the direction of the movement of electrons, to improve the working gas of the ionization rate and the effective use of the electron energy. Electronic destination not just the substrate, the vacuum chamber wall and the anode of the target source is electronic destination. But generally the substrate and the vacuum chamber and the anode at the same electrical potential. The interaction of magnetic and electric fields (EXB drift) of a single electron trajectory was a threedimensional spiral, rather than just in the circular motion of the target surface. The contour of the circumference of the target surface sputtering, that is the cylindrical weeks shape of the shape of the target source of magnetic field lines. The magnetic field lines distribution of direction differences can film a great relationship. EXB the shift mechanism is not just magnetron sputtering, multiarc plating target source, ion source, ion source and so In the second principle. The difference is that the direction of electric field, voltage, current size only.The basic principle of magnetron sputtering is the use of plasma in the Ar02 gas mixture under the action of the electric field and an alternating magnetic field, the accelerated highenergy particles bombarding the target surface energy exchange, the target surface atoms from the original crystal cell to escape, and transferred to the surface of the substrate film.Magnetron sputtering is characterized by a high deposition rate, substrate temperature, good adhesion of the film, large area coating. The technology can be divided into a DC magnetron sputtering and RF magnetron sputtering method. sputtering technique Sputtering in a vacuum chamber, the charge energy particle bombardment of the target surface, play target atoms and other particles pass through the particle momentum, and its precipitation on the substrate to form a thin film technology. Sputtering technology can realize the rapid deposition of large area, thin film and the substrate with good adhesion, high density sputtering, pinhole, film controllability and repeatability, etc., and any material can be sputtered which in recent years the rapid development of a wide range of applications. With tens of electron volts energy particles bombarding the material surface, the material will be excited to gas, the use of this phenomenon to the surface of the coating, etching, cleaning and surface analysis of materials. Ion easy acceleration or deflection in the electromagnetic field, so the charge of energetic particles is generally ion. When the ion bombardment of the target surface will have many effects, shown in Figure 1. In addition to the target of atoms and molecules is ultimately involved in the film, the film growth of other effects also have a huge impact.Figure 1 Schematic diagram of a magnetron sputtering mechanism The sputtering mechanism is currently accepted by most people is the Sigmund linear cascade sputtering mechanism. Incident ion bombardment of the target surface, its part of the energy transfer to the surface lattice atoms, causing the movement of the target atoms in Some atoms get energy from the lattice at the shift, and to overe the surface barrier is a direct sputtering。 3. 制備切削刀具和模具的超硬膜 采用普通化學氣相沉積技術(shù)制備TiN、TiC等超硬鍍層，溫度要在1000 ℃ 左右，這已經(jīng)超過了高速鋼的回火溫度，對于硬質(zhì)合金來說還可能使鍍層晶粒長大。如果安排四個非平衡靶構(gòu)成閉合磁場，則可以進一步提高等離子區(qū)的離子濃度和離子分布的均勻性。 非平衡磁控濺射的磁場又分閉合場和非閉合場兩種。當交流濺射技術(shù)用于對靶濺射時，一個周期中每塊靶輪流充當陰極和陽極，形成良好的“自清潔”效應。 (5) 反應過程與沉積過程分室進行，既能有效提高薄膜沉積速率，又能使反應氣體與薄膜表面充分反應生成化合物薄膜。 (3) 反應磁控濺射沉積過程中基板升溫較小，而且制膜過程中通常也不要求對基板進行高溫加熱，因此對基板材料的限制較少。 磁控濺射源在結(jié)構(gòu)上必須具備兩個基本