半導(dǎo)體物理與器件第四版課后習(xí)題答案4(完整版)
【正文】 ng the results from above, we find the maximum at _______________________________________(a) Silicon: We have We can write For eV and eV we can write or cm We also have Again, we can write For and eV Then or cm(b) GaAs: assume eVThen or cm Assume eV Then or cm_______________________________________ Plot_______________________________________(a) cm cm(b) cm cm(c) cm(d) cm cm cm(e) cm cm cm_______________________________________(a) cm cm(b) cm cm(c) cm(d) cm cm cm(e) cm cm cm_______________________________________(a) Ge: cm (i) or cm cm (ii) cm cm(b) GaAs: cm (i) cmcm (ii)cm cm(c) The result implies that there is only one minority carrier in a volume of cm._______________________________________ (a) For the donor level or (b) We have Now or Then or _______________________________________(a) ptype(b) Silicon: or cm Then cm Germanium: or cm Then cm Gallium Arsenide: cm and cm_______________________________________(a) ntype(b) cm cm(c) cm cm_______________________________________ cm ntype_______________________________________ cm So cm, Then cm so that cm_______________________________________ Plot_______________________________________ Plot_______________________________________ Plot_______________________________________ so cm cm_______________________________________(a) ptype Majority carriers are holes cm Minority carriers are electrons cm(
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