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河南理工大學(xué)萬(wàn)方科技學(xué)院畢業(yè)論文 I 硫?qū)饎偸髥尉Ш铣傻挠绊? 摘 要 金剛石是具有諸多優(yōu)異性能的極限材料,廣泛用于工業(yè)、科技、國(guó)防、醫(yī)療衛(wèi)生等領(lǐng)域。 摻硫金剛石具有諸多優(yōu)良的性質(zhì) ,比普通金剛石顯示出更優(yōu)異的性能, 因而成為當(dāng)前金剛石摻雜中的研究熱點(diǎn)。 本文是通過將一定比例的硫粉均勻的加入到金剛石合成體系中,在六面頂壓機(jī)上利用高溫高壓方法合成摻硫金剛石。實(shí)驗(yàn)通過設(shè)置摻硫梯度,研究了不同含量的硫?qū)饎偸铣傻挠绊?。?shí)驗(yàn)分為兩個(gè)部分進(jìn)行研究:( 1)實(shí)驗(yàn)摸索階段:通過合成不摻加硫的金剛石確定實(shí)驗(yàn)條件,最終確定實(shí)驗(yàn)條件為,壓力: ,晶床和 堵頭尺寸: 6mm 和 7mm;( 2)摻硫金剛石合成階段:在第一階段設(shè)置的實(shí)驗(yàn)條件下,將不同比例的硫粉摻入金剛石合成體系中,合成金剛石。通過研究發(fā)現(xiàn):隨著 系統(tǒng)中的硫含量的增加 ,金剛石晶體的顏色開始逐漸發(fā)生變化,由黃色逐漸變?yōu)榘迭S和黑色。同時(shí)隨著含硫量的增加,晶體的尺寸和完整度減少,而且晶體表面上的凹坑越來(lái)越嚴(yán)重,并且 晶體中包裹體含量增加,并 由彌散狀逐漸增加到貫穿整個(gè)晶體內(nèi)部。 通過對(duì)摻硫和未摻硫的金剛石拉曼圖譜進(jìn)行對(duì)比,我們得出 在誤差允許的范圍內(nèi)拉曼峰和半高寬都基本在很小范圍內(nèi)波動(dòng),金剛石拉曼峰基本沒有變化。 關(guān)鍵字: 金剛石;高溫高壓;硫摻雜。 河南理工大學(xué)萬(wàn)方科技學(xué)院畢業(yè)論文 II Abstract Diamond is the ultimate material has many excellent properties, is widely used in industry, science and technology, national defense, medical and health fields. Sulfur doped diamond has many excellent properties, than ordinary diamond shows more excellent performance, has bee the current research focus of doping of diamond. This paper is sulfur powder through a certain proportion of the evenly added to the diamond synthetic system, synthesis of sulfur doped diamond by using high temperature and high pressure in the six cubic press. The experiment by setting the sulfur doping gradient, the effects of different content of sulfur in diamond synthesis. The experiment was divided into two parts: (1) experiment fumble stage: the experimental conditions were determined by synthesis without addition of sulfur diamond, ultimately determine the experimental conditions, pressure: , crystal bed and plug size: 6mm and 7mm。 (2) sulfur doped diamond synthesis stage: the first stage setting next, the sulfur powder by adding different proportion into diamond synthesis system,synthetic diamond. Through the study found that: with the increase of sulfur content in the system, the color of diamond crystals gradually began to change, gradually change from yellow to dark yellow and black. At the same time with the increase of sulfur content, size and the integrity of the crystal is reduced, and pits on the surface of crystal is more and more serious,and inclusions in the crystal content increased, and the scattered gradually increased to run through the whole parison of diamond Raman spectra of sulfur doped and undoped sulfur, we draw in the tolerance of the Raman peaks and FWHM are basic varies in a small range, the diamond Raman peak basically no change. Keywords: diamond。 high temperature and high pressure。sulfurdoped.河南理工大學(xué)萬(wàn)方科技學(xué)院畢業(yè)論文 i 目 錄 第一章 緒論 ......................................................................................................1 金剛石簡(jiǎn)介 .........................................................................................1 金剛石的組成 ..........................................................................1 金剛石的結(jié)構(gòu) ..........................................................................2 金剛石的性質(zhì)和用途 ...............................................................3 金剛石的分類 ..........................................................................5 金剛石的成因 ..........................................................................6 金剛石的開發(fā)簡(jiǎn)史和研究現(xiàn)狀 .........................................................6 金剛石的開發(fā)簡(jiǎn)史 ..................................................................6 金剛石的研究現(xiàn)狀 ..................................................................7 選題意義以及主要研究?jī)?nèi)容 .............................................................8 第二章 金剛石的合成理論 ............................................................................10 金剛石的生長(zhǎng)規(guī)律 ...........................................................................10 金剛石生長(zhǎng)的一般規(guī)律 ........................................................10 影響金剛石晶體生長(zhǎng)速度的主要因素 ................................11 金剛石生長(zhǎng)速度的分區(qū)及分析 ............................................12 金剛石合成技術(shù) ...............................................................................14 高溫高壓技術(shù) ........................................................................14 溫度梯度法 ............................................................................14 合成實(shí)驗(yàn)的精密化控制 ...................................................................17 壓力控制 ................................................................................17 溫度控制與功率控制 ............................................................18 第三章 原材料、設(shè)備和組裝 ........................................................................20 原材料 ...............................................................................................20 傳壓介質(zhì) ——葉蠟石和白云石 ............................................20 河南理工大學(xué)萬(wàn)方科技學(xué)院畢業(yè)論文 ii 石墨 ........................................................................................22 觸媒 ........................................................................................22 氯化鈉 ....................................................................................22 材料加工 ................................................................................23 實(shí)驗(yàn)設(shè)備介紹 ...................................................................................24 實(shí)驗(yàn)組裝 ............................................................................................27 白云石襯管葉蠟石塊 ............................................................27 導(dǎo)電鋼帽(堵頭) ................................................................28 輔助熱源 ................................................................................29 核心結(jié)構(gòu) ................................................................................29 實(shí)驗(yàn)組裝的確定 .....................................................................29 第四章 摻硫金剛石的合成 ............................................................................32 硫的性質(zhì)和成鍵特點(diǎn) ........................................................................32 硫的結(jié)構(gòu) ...........................................................