冶金法太陽能級多晶硅提純技術(shù)現(xiàn)狀與質(zhì)量分析(ppt31頁)(已修改)
2025-01-09 03:38 本頁面
【正文】 Status quo of Metallurgical Purified Solar Grade PolySilicon and its Quality Analysis 冶金法太陽能級多晶硅提純技術(shù)現(xiàn)狀 與質(zhì)量分析 Bradley Shi 史珺 上海普羅新能源有限公司 ProPower Inc. 目 錄 ? Brief Introduction of Metallurgical Purification of SOG 冶金法簡介 ? Evolution of Metallurgical Purification of SOG 冶金法的進(jìn)展 ? Impurities and its affect to the SOG 太陽能級多晶硅的雜質(zhì)及其對材料性能的影響 ? Quality Stability Analysis of Metallurgical Purified SOG 冶金法多晶硅的質(zhì)量穩(wěn)定性分析 Technology for PolyCrystallin Silicon Production 多晶硅提純技術(shù)分類 ? Chemical Routine 化學(xué)法 – Chemical changes happen to Si in purification process提純過程中硅發(fā)生反應(yīng) ? Physical Routine（ Metallurgical Routine ) 物理法 (冶金法） – No chemical change happens to Si in purification process 提純過程中硅不發(fā)生反應(yīng) Chemical Routine 化學(xué)法 ? Chemical changes happen to Si in purification process 硅發(fā)生了化學(xué)反應(yīng) – Siemens Routine 西門子法 – Modified Siemens Routine 改良西門子法 – Mainstream Routine at present 目前的主流工藝 – Regular Purity is 9N 常規(guī)純度應(yīng)可達(dá)到 9N 多晶硅純度的表示 ? Substract the content of P,B,and Metals from 100% 用 100%扣除磷、硼、金屬雜質(zhì)后的硅的純度 ? C,O,N is about 1~10ppm（無需扣除） 含有大約 1~10ppm級的碳、氧、氮等元素 ., 7N poly silicon, may contain: B: 20ppb, P: 50ppb, metals: 10ppb。 and C: 1ppm, O: 5ppm, N : 1ppm （絕對的硅純度實(shí)際為 5N） But content of C,O,N could not exceed the limit 但 C、 O、 N不能過大。 太陽能所需要的多晶硅純度 ? Poly silicon with purity higher than 7N could not be made into solar cell directly 7N以上的多晶硅無法用來直接作太陽能電池 ? B or P must be mixed as dopant 須摻入硼或磷 ? The dopant of B must be about 對太陽能來說，硼的摻雜濃度大約在 ., for solar cell, the purity must down to 6N even using a 11N polysilicon 也就是說，在生產(chǎn)太陽能電池時(shí)，即便采用 11N的高純硅，也必須摻雜降到 6N左右。 Impurities and Solar efficiency 雜質(zhì)對光電轉(zhuǎn)換效率的影響 Demand of New Technology 新工藝的需求 ? Because impurities must added to high pure polysilicon from Siemens method, which means energy double waste采用西門子法得出高純度的硅后，又要摻雜到 6N的純度，意味著能源的雙重浪費(fèi)
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