sic材料的特性及應(yīng)用(已修改)
2025-10-23 16:43 本頁面
【正文】 SiC材料的特性及應(yīng)用 顏小琴 SiC材料的發(fā)展史話 SiC材料的特性及應(yīng)用 SiC材料的制備方法 小結(jié) Silicon Carbide Technology(SiC) Why a new Technology? ? Si has served wonderfully well as a semiconductor for most applications ? Si devices fail to operate at high temperatures of around 300186。C ? Since Si is a small band gap material, sufficiently high breakdown voltages cannot be applied SiC’s superior Performance SiC is especially useful for: ? High Temperature Environment ? High Radiation conditions ? High Voltage switching applications ? High power Microwave applications SiC is superior pared to Si because: ? It has exceptionally high Breakdown electric field ? Wide Band gap Energy ? High Thermal conductivity ? High carrier saturated velocity 起初 Acheson錯誤地認(rèn)為這種材料是 C和 Al的化合物，他的目的是想尋找一種材料能夠代替金剛石和其他研磨材料，用于材料的切割和拋光，他發(fā)現(xiàn)這種單晶材料具有硬度大、熔點高等特性，于 1893年申請了專利，將這種產(chǎn)品稱為“ Carborundum”。 開辟了 SiC材料和
教學(xué)課件相關(guān)推薦
鄂ICP備17016276號-1