【正文】
。隨著甲醛氣體濃度的增加輸出電壓的增加呈線性關(guān)系并且有較短的響應時間。響應時間和恢復時間(定義為達到最終平衡值 90%)為 2分鐘,恢復時間為 4 分鐘。 氣敏機理是基于 氧化鉻和氧化銦材料的電導的變化。材料的表面對氧的吸收影響了氧化鉻和氧化銦傳感器的導電性。氧的吸附取決于顆粒大小,較大的材料面積,和合適的傳感器操作溫度。隨著空氣中溫度的增加,氧的狀態(tài)被吸附在氧化鉻和氧化銦材料的表面的氧的狀態(tài)在下面的反應中發(fā)生。氧從材料中捕獲電子,導致了空穴濃度的增加和電子濃度的減少。當傳感器接觸甲醛氣體時,被捕獲的電子以吸附狀態(tài)被釋放,導致傳感器電阻減小。因此,氧化鉻和氧化銦傳感器甲醛氣體的減少是敏感的。 該傳感器具有良好的穩(wěn)定性(沒有顯示的數(shù)據(jù))。穩(wěn)定性機制更為復雜和進一步的工作是得到了 一一個明確的認識。 4總結(jié) 通過固態(tài)合成技術(shù)氧化鉻和氧化銦樣本的制備甲醛探測的傳感材料已被證明是可行的。制作好的傳感器顯示了很大程度的反應,高選擇性,快速反應,和在低操作溫度時良好的恢復性。實驗結(jié)果表明了混有氧化鉻的氧化銦氣體傳感器的材料潛力。 鳴謝 這項工作得到了中國國家自然科學基金會和中國云南省自然科學基金支持。 — 41 — 2 外文譯文 The fabrication and gassensing characteristics of the formaldehyde gas sensors with high sensitivity Abstract Gassensing characteristics of CdOmixed In2O3 to formaldehyde were investigated. Gas sensors of indirect heating type were fabricated by the sensitive materials. The phases in the resulting materials and the morphologies of the sensing layers were characterized by Xray diffraction (XRD) and scanning electron microscopy (SEM), respectively, before and after calcination. The effects of operating temperature on the sensor response and the response versus gas concentration properties of the CdO–In2O3 sensors were investigated. It was shown that the sensors exhibited good response properties to formaldehyde gas at low operating temperature, making them to be promising candidates for practical detectors to formaldehyde gas. 1. Introduction As an important industrial chemical, formaldehyde is utilized in the manufacturing of building boards, plywood, and lacquer materials [1,2]. Moreover, it is an intermediate in consumer products, such as detergents and soaps, and also used in phar macology and medicine because of its sterilization property. However, the investigated results showed that formaldehyde could cause many damages to the human body because it is a volatile and deleterious pound [3,4]. Therefore, effective methods to monitor formaldehyde have been demanded for atmospheric environmental measurement and control. The fabrication of gas sensors is thought to be a desirable means for monitoring the gases. Our present investigation mainly deals with the detection of formaldehyde. Although gas sensors based on semiconductor metal oxides provide the safe detection of toxic or flammable gases, they still have some limitations and challenges such as sensitivity, selectivity, longterm stability, and so on. To overe the disadvantages of semiconductor metal oxide gas sensors, the research on preparation and doping of semiconductor metal oxides had been done. Indium oxide is a promising semiconductor material with a wide band — 42 — gap ( eV), whose electron concentration is determined mainly by the concentration of stoichiometric defects (such as oxygen vacancy) like other metal oxide semiconductors. In view of the sensing mechanism, the particle size, defects, the properties of surface and interface, and stoichiometry directly af