pdaaaa畢業(yè)論文心得分享我的投稿經(jīng)歷-酸甜苦辣-展示頁
2024-08-19 10:07本頁面
【正文】 titative, agreement has been obtained before withsimpler phenomenological 39。判決結(jié)果－拒！有一次敗了！當時心情十分沮喪。Dear Dr. ,We acknowledge the receipt of the above manuscript submitted tothe Rapid Communications section of Physical Review B.We have examined your manuscript and it appears to be quite focusedon application and material science. Therefore, a more detailedletter as to what new and significant physics is presented in yourmanuscript and why Physical Review B is the most appropriate journalfor your manuscript would be very helpful.Please note that in doing a preliminary character count, we havefound that your manuscript is too long for the short paper sectionsof our journal. In view of this and the above, we feel that itwill be more productive if we consider this as a regular articlewhen we receive a persuasive response to the above concern. You mayalso wish to revise your manuscript so that the new and significantphysics is better highlighted. In addition, please expand it intoa regular article format (. by adding section headings) and weencourage you to add any material our readership may benefit fromsince no length limit applies.We will hold your manuscript in our office until we receive yourresponse.Yours sincerely,當時覺得編輯這么說了，感覺還是挺有希望的，于是快馬加鞭修改，之后就投出去了。改完之后，由于自我感覺良好，所以膽子也大起來了，于是就投到了Physical Review B中的Rapid Communications板塊，很快編輯就回信了，客氣地說我的文章太長了，然后建議我修改后作為regular paper 投Physical Review B。這個修改可是個相當漫長的過程。然后把計算的勢壘高度畫成與分裂柵電壓的關系，滿足了審稿意見5）4. 加了理論計算聲電電流。3. 把我們理論計算得到的在二維電子氣中的勢壘高度和我們的實驗做了對比，遺憾的是我們的實驗當時只做了三條曲線，后面的審稿意見就提出來了，這點后面再說。首先，我加了實驗。換了很多圖。這個很容易改。.5) The strongly different behaviour above and below the pinchoffvoltage is not obvious for the nonexperts. All curves look moreor less the same. One could, for example, add another figure, orinsert, to show the potential height versus gate voltage.6) How do these theoretical results of potential height versus gatevoltage pare with experiments? There exists at least onereport to determine the potential height of quantumpoint contactsbelow pinchoff as function of gate voltage (Gloos et al., Phys.Rev. B 73, 125326 (2006)). Possibly, one could also pare thepresent data with 3D simulations of quantum dots (Vasileska et al.,Semicond. Sci. Technol. 13, A37 (1998)).7) Figure 1，It would be better to mark the distance between the two metal gatesas the relevant parameter, and not the size of one gate.8) Figure 3The numbering of the two density axes looks rather odd. Could it notbe done
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