【正文】
an anisotropic SWNT which is semiconductive substance. The first SWNT transition pressure is obtained by (): Where R0 is SWNT initial radius and D is SWNT elastic constant. For SWNTs, D= which is obtained by Molecular Dynamics. In consequence, the dimension of Pt1 is: PULLIN PHENOMENON Dequensnes ey al.(2021) has demonstrated when a voltage is include between a SWNT and a conductive ground plane, the SWNT deflects. When the deflection reaches to a certain amount, SWNT bees unstable and collapses. This phenomenon is called Pullin and the relative voltage, Pullin voltage. The applied electrostatic force per length is found by classic capacitance model as: Where ε0 is vacuum permittivity, V is include voltage, Rnt is SWNT radius and r is SWNT and ground plane distance. Wang and Varadan(2021) prove that this instability is because of SWNT kink under bending conditions, which has been observed by high resolution transmission electron, when the strain energy at the inner wall of the pressive side reaches the critical value. Since stress and strain follow a linear distribution in radial direction, it is reasonable to assume that kink instability happens when inplane strain under uniformly distributed pression. The kink slope being a function of dnt can be found by: That L is SWNT length, dNT, is its diameter and h is SWNT effective thickness. DEFINITION OF TUNEABLE PRESSURE SWITCH By bining the above mentioned concepts about Pullin phenomenon and transition pressure of SWNTs, the tuneable pressure switch mechanism can be defined. As it can be seen, from , the θer is a function of SWNT diameter. While a hydrostatic pressure is applied on SWNT, its diameter reduces uniformly and proportionally to the applied pressure: WheredNT0 is SWNT39。s is restricted because Gao et al.(1998)bsowed when SWNT diameter exceeds a limit, its natural shape is collapsed form. Thus, it is imposssible to use them in this system. Consequently, the pressure sensor only is able to sense retricted number of pressure(SWNTs39。s transition pressure, its cross section shape changes, turning SWNT into a semiconductive pressure sensing system has the ability to sense the change of SWNT from a conductive material to a semi conductive substance for switching. Th