雙頻容性耦合等離子體刻蝕工藝的物理基礎(chǔ)-powerpoi(編輯修改稿)
2025-03-23 09:23 本頁(yè)面
【文章內(nèi)容簡(jiǎn)介】 h free 2 :ang leazim uth )cos θ+/(1sin θ= ta n θ )21(cos :ang le scatt ering )2/(cosε :coll isio n aft er th eene rgy th esim ulati on CarloMon temoti on lCol lis ion a32132ccr11cc201?????l???????TN?????????0 ?1 qr 離子在鞘層中與中性粒子的碰撞 ? 彈性碰撞 ? 電荷交換碰撞 Onedimensional model When the chamber radius R is far larger than the distance d between two electrodes, we can use the 1D model to simulate the discharge, ., Rd. x=0 x=d LF )sin ()sin ()( tVtVtV hhllrf ?? ??HF Influence of HFpower frequency on plasma density 0. 0 0. 5 1. 0 1. 5 2. 00123 ne (1010cm3) fh= 60 MHz fh= 30 MHz fh= 20 MHzx (cm ) P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, 0 5 10 15 200123 n (1010cm3)x ( mm ) 2M H z 5M H z 10M H z 13. 56M H zP=50 mTorr, Vh=50 V, Vl=100V, fh =60 MHz, fl=2,5, 10, MHz Influence of LFpower frequency on plasma density 0 . 0 0 . 5 1 . 0 1 . 5 2 . 06004002000Vsh (V) RF cyclefh= 60M Hz6004002000 fh= 30M Hz6004002000 fh= 20M Hz P = 100mTorr, Vh = 200V, Vl =400V fl = 2MHz, fh = 20, 30, 60MHz, Influence of HFpower frequency on sheath voltage drop 1. 0 1. 5 2. 0 2. 5 3. 0 3. 5300250200150100 Vsh (V)Vl/Vh A na ly tic M ode l 1 /30 MHz 2 /30 MHz 6/3 0M Hz平均鞘層電位降： 與解析模型的比較 0 100 200 300 4000. 000. 010. 020. 03 fl= 5MHzEnergy (eV)0. 000. 010. 020. 03 fl= 2MHz0. 000. 010. 020. 03 fl= 1MHzIED0 100 200 300 4000. 000. 010. 02fh= 60 MHz Energy (eV)0. 000. 010. 020. 030. 04fh= 30 MHz 0. 000. 010. 020. 030. 04 fh= 20 MHz IEDfh = 30MHz, P =50mTorr, Vh = 200V, Vl = 400V fl = 2MHz P = 100mTorr, Vh = 200V, Vl = 400V 離子入射到電極上的能量分布 HF power LF power H 2R D Schematic diagram of DFCCP H= 2R= D= Twodimensional model I. Influence of high frequency fH ? averaged electron density: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases significantly as increasing values of fL. ? averaged electron temperature: 27MHz 40MHz 60MHz VHF=50V, VLF=100V, fL =2 MHz, p=100 mTorr The electron density increases slightly as increasing values of fL. II. influence of low frequency 12MHz With the increase of low frequency, two sources bee from decoupling to coupling, and the electron density increases significantly when two sources coupling. 2MHz 6MHz ? averaged electron density: VHF=50V, VLF=100V, fH =60 MHz, p=100 mTorr ? Averaged electron temperature: 2MHz With the increase of low frequency, the temperature of electrons increases slightly. 6MHz 12MHz VHF=50V, VLF=100V, fH =60 MHz, p=100 mTorr Ez in a LF period: VHF = 50V, VLF = 100V, fLF = 2MHz, fHF = 60MHz, p = 100mTorr Er in a LF period: VHF = 50V, VLF = 100V, fLF = 2MHz, fHF = 60MHz, p = 100mTorr Fluid simulations for CF4 plasmas (1D) 1. Basic model 2. CF4 plasma is an electronegative discharge, ., there 3. are no negative ions in the discharge. The plasma is 4. posed of neutrals (atoms and molecules), electrons, 5. positive ions, and negative ions. 3242622 34323FC ,FC ,FCF, C, CF, ,CF ,CF ,CF :are spe cies neu tr
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