flashmemory(編輯修改稿)
2025-08-11 18:39 本頁面
【文章內(nèi)容簡介】 n erase operation read operation NOR and NAND Flash ? NOR ? BL = NOR (all WL’s of nonprogrammed cells) ? The word line of selected row high ? Unprogrammed = 1 ? Programmed = 0 ? NAND ? BL= NAND (all WL’s of nonprogrammed cells ) ? All word lines high by default with exception of selected row ? Unprogrammed = 1 ? Programmed = 0 set 4 5 Comparison of NOR and NAND Flash ? NAND Flash cells are 60% smaller than NOR Flash cells ? Wear leveling: limit in the number of times NAND Flash blocks can reliably be programmed and erased. ? NAND Flash array: grouped into a series of blocks, which are the smallest erasable entities ? Random access time
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鄂ICP備17016276號-1