【正文】 t an i oTTVVvVs e c t i onBCVvof fTonTVVvs e c t i onCDVVvof fTonTVvs e c t i onAB2121,02121)()(12)(21)(?????????????????，：，：，：The situation just analyzed is two extreme cases of vI. real vI changes continuously, it can take other values. Lecture 29 MOS transistor and CMOS device II. Voltage, Current Transfer Characteristics VTC CTC 2022/3/13 Chapter 12 Integrated Circuit Technologies 30 III. Input Noise Margin 輸入噪聲容限 .r a n g ei n p u ti n gc o r r e s p o n di t sr a n g ea l l o w e dw i t h i nc h a n g eo u t p u tc h a n g enob a s i c a l l yvVandVofr a n g ec e r t a i nw i t h i nv a r yc a nv OILIHI，；，( m a x )( m a x )( m i n )( m i n )OLILNLIHOHNHVVVVVV????For +5V CMOS device, if VIH(min)=， VIL(max)= VOH(min)= ， VOL(max)= VNH = = VNL = = Solve for input noise margin Lecture 29 MOS transistor and CMOS device 2022/3/13 Chapter 12 Integrated Circuit Technologies 31 Increase Noise Margin Analysis ? Conclusion： Noise margin can be increased through higher VDD. Diff. VDD, corresponding VTC VNH, VNL change with VDD Lecture 29 MOS transistor and CMOS device 2022/3/13 Chapter 12 Integrated Circuit Technologies 32 CMOS inverter static input/output characteristics 1. Input char. Distributed diode When 0≤vI≤VDD， input protection not working Input current i≈0. Real CMOS all have input protection when vIVDD+VDF or vI , both can make C C2 voltage clamped at VDD+VDF 。同時(shí)交流噪聲容限比直流噪聲容限大很多。，：5nsiss e r i e s7 4 A H C10nsiss e r i e s7 4 H 。2022/3/13 Chapter 12 Integrated Circuit Technologies 1 Lecture 29 Outline Lecture 29 MOS transistor and CMOS device 1. Diode AND, OR gate and its characteristics； 2. MOS transistor construction and principle； 3. MOS transistor input/output characteristics ； 4. MOS transistor equivalent switching circuit； 5. CMOS inverter circuit and working principle； 6. Input noise margin (輸入噪聲容限 )； 7. CMOS inverter static input/output characteristics ； 8. CMOS inverter dynamic characteristics 。 Lecture 29 MOS transistor and CMOS device Two types of protects 2022/3/13 Chapter 12 Integrated Circuit Technologies 33 II. Output Characteristics ????OLGSOLOLOLVVIs a m eu n d e rIfVc h a ro u t p u tL o w，)(..1Output vO in relation to output iD P channel off, N channel on Lecture 29 MOS transistor and CMOS device 2022/3/13 Chapter 12 Integrated Circuit Technologies 34 II. Output Characteristics P channel on, N channel off Lecture 29 MOS transistor and CMOS device Note IOH negative l e s sVVIs a meu n d e rIfVc h a ro u t p u tHi g hOHGSOHOHOH????，)(.22022/3/13 Chapter 12 Integrated Circuit Technologies 35 CMOS Inverter dynamic characteristics I. Propagation Delay Time 。 Lecture 29 MOS transistor and CMOS device 2022/3/13 Chapter 12 Integrated Circuit Technologies 41 The End of Lecture 29 Thank you for your participation! Lecture 29 MOS transistor and CMOS device 2022/3/13 Chapter 12 Integrated Circuit Technologies 42 Class evaluation and problem assignment Two way interactive questionandanswer session. Homework assignment: P482~484, 1, 3, 7, 11, 15 Lecture 29 MOS transistor and CMOS devic