bi2se3拓?fù)浣^緣體材料的電子結(jié)構(gòu)研究(完整版)
【正文】 子的p態(tài)電子構(gòu)成，價(jià)帶主要由Bi原子的p態(tài)電子和Se原子的p態(tài)電子構(gòu)成，. 計(jì)算結(jié)果和其它理論研究吻合得較好，說(shuō)明采用密度泛函理論的廣義梯度近似來(lái)計(jì)算和預(yù)測(cè)Bi2Se3材料的電子結(jié)構(gòu)和光學(xué)性質(zhì)是比較可靠的.參考文獻(xiàn)1. . Kim , I. S. Kim , T. K. Kim , S. J .Hong , B. S. Chun.[J] .Mater. Sci. Eng. BSolid State Mater. Adv. Technol., 2002, 90, 42～46.2. K. Yanagimoto, , , T. Sawada . [ J ] . J .Alloy. Compd. , 2004 , 377 , 174～1783. J . Y. Yang , T. Aizawa , A. Yamamoto , T. Ohta . [ J ] . J .Alloy. Compd. , 2000 , 312 , 326～330 .4. A. Purkayastha , Q . Y. Y an , M. S. Raghuveer , et al . [ J ] .Adv. Mater . , 2008 , 20 , 2679 .5. W. Wang , X. L . Lu , T. Zhang , et al . [ J ] . J . Am. Chem. Soc . , 2007 , 129 , 6702 .6. J . L .Mi, X. B. Zhao, T. J. Zhu, J. P. Tu, G. S. Cao. [J].J Alloy. Compd. , 2006 , 417 , 269～272 .7. Chen Y L,Chu J H, Analytis J G ,et al．Massive Dirac Fermi the surface of a magnetically doped topological insulator[J].Science 2010,3296598. Hasan M Z, Kane C L. colloquium: topological insulators[J]. Rev Mod Phys,2010,82:30459. Moore J E .topological insulator :The next generation[J].Nat phys,2009,5:37810. ,[D]. 湘潭大學(xué), 201311. Analytis J G，Mc Donald R D, Riggs S C, et al .Twodimensional surface state in the question limit of a topological insulator [J] .Nat Phys,2010,6,96012. 楊紅, 拓?fù)浣^緣體中的自旋劈裂，[D]. 湘潭大學(xué), 201313. Segall M D,philip L J D,probert M J,e
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