納米表面工程的基本問(wèn)題及其進(jìn)展(文件)
【正文】 properties of the material resulting from the atoms and their arrangement, that make material interesting or useful. 4. The performance of the material, that is, the measurement of its usefulness in actual conditions, taking account of economic and social costs and benefits. 思考題： 如何認(rèn)識(shí)表面科學(xué)在納米材料中的作用 您對(duì)“宏觀、介觀、微觀一體化”的理解 Are there, in nature, behaviors of whole systems unpredicted by the parts? 是否本質(zhì)上存在由系統(tǒng)的局部性質(zhì)無(wú)法預(yù)言的整體行為 ? Thanks for joining See you next time 4 Mbit DRAM chip 未摻雜 GaAs 半絕緣襯底 n+ n+ 摻雜 GaAs AlGaAs 源 柵 漏 a. FET結(jié)構(gòu)示意圖 微 觀 (Micro) 介 觀 (Meso) 宏 觀 (Macro) 109 108 107 106 105 104 103 102 101 100 m 1010 1011 1012 101 納 米 (Nano) Xrays Ultraviolet grays LIGHT Infrared Microwaves 107 104 101 102 105 108 1011 l (?m) l (nm) Violet Blue Green Yellow 390 455 492 577 622 770 597 Orange Red 103 102 101 100 101 102 103 l (?m) Soft Xray Ultraviole Light SWIR MWIR LWIR Milliwaves Ultrasonic Electromagic Spectra 。 四、 納米表面工程的科學(xué)問(wèn)題 環(huán)境問(wèn)題 尺度問(wèn)題 晶 體 周 期 性 結(jié) 構(gòu) 電子在周期勢(shì)場(chǎng)中的運(yùn)動(dòng) 量子力學(xué) Schr246。 ?低維非平衡材料結(jié)構(gòu)的形成演化和表征。 A fieldassisted local anodization technique using an atomic force microscope (AFM), a singlehole transistor has been fabricated on an undoped hydrogenterminated diamond surface where ptype conduction occurs on the subsurface region. Power dissipation and integration issues are of paramountimportance for designing future ultralarge scaleintegrated circuits. Singleelectron devices exploiting the Coulomb blockade effect are thought to have the potential to overe these difficulties because a singleelectron transistor operates with one electron, which can reduce the power consumption and can be applied to highly integrated devices. Measure
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