【正文】
The frequency of ac signal play an important role in the capacitance of a MOS Capacitor (after Grove, et al.) 2022/2/11 46 對理想 MOS二極管,判斷: ? Φ ms= Φ m – Φ s0, ? Φ ms= Φ m – Φ s0, 2022/2/11 47 例題: P型襯底, Na= 1014cm3, 氧化層厚度500197。 SCCC1110??0CSCSCCCC00 11??0CC00000 xkdVdQC M ???2022/2/11 37 Ptype subst rate Accumulation )2e x p ( kTqQ ss ???????????????????sgoxsSox VqkTCddQCC211111oxCVQC ????SiCoxCQ?Q??2022/2/11 38 積累區(qū) ( 0) MOS系統(tǒng)的電容 C基本上等于絕緣體電容 。 d) 界面態(tài)電荷密度為零 2022/2/11 20 改變柵壓,半導體表面狀態(tài)隨之變化 2022/2/11 21 MOS在外加電壓作用下,達到平衡的判據(jù): SOXg VVV ??? SM 2022/2/11 22 Accumulation: Qm QS d x Charge Distribution x E(X) Electric Field 2022/2/11 23 EF Vg0 EF Ev Ec Ei WqNQ Asc ??Charge Distribution E(X) x Electric Field x w Qm d )(x? depletion: 2022/2/11 24 inversion EF Vg0 EF Ev Ec Ei Strong Inversion: 2022/2/11 25 Strong Inversion: x wm Qm d Qn Qsc Charge Distribution mAnss WqN ????Electric Field x E(x) Once strong inversion occurs, a very small increase in band bending corresponding to a very small increase in depletionlayer width results in a large incre