【正文】
ralSEM - + + - - - - - M M e e Objective Lens BSE Detector Residual Gas M High Pressure (~ 270Pa) Non Conductive Specimen P r e s s u r e M e a n F r e e P a t h10 3 Pa 1 0 0 m m1 3 P a 1 0 m m2 7 0 P a 0 . 5 m mAstigmatism correction method Beam Diameter Before correction Objective Lens Electron Source Electron Beam X Y Electron Beam Electron Source Objective Lens Stigmator After correction Y X Stigmator Beam Diameter Photomultiplier Primary Electron Beam Specimen Photons Light Guide Signal CRT +10kV Secondary Electron Scintillator Phosphors Al Coating Layer Secondary electron detection system Photo Multiplier Tube 第二節(jié)分辨率和放大倍數(shù) 一、分辨率 掃描電鏡的分辨率有兩重意義:對微區(qū)成分而言,它是指能分析的最小區(qū)域;對成像而言,它是指能分辨兩點之間的最小距離。給試樣的綜合分析帶來極大的方便。試樣在電子束作用下,激發(fā)出各種信號,信號的強度取決于試樣表面的形貌、受激區(qū)域的成分和晶體取向。的電子束。第六章 掃描電子顯微書 Lettuce Field(16M DRAM) Theory of Scanning Electron Microscope Hitachi HighTechnologies Corporation Nano Technologies Sales Dept. 1. Resolution Improvement 30kV 1kV nm nm nm nm nm nm S5200 S5000H S5000 Development of a new UHR Obj. Lens New S4800 FESEM Resolution: 15kV 1kV Configuration of a scanning electron microscope Objective Movable Aperture Model S3000N Specimen Stage CRT Electron Gun SE Detector Specimen Chamber Comparison among OM, TEM and SEM O M T E M S E MV o l t a g e ―Hi g h V o l t a g e2 5 ~ 3 0 0 k VHi g h V o l t a g e0 . 5 ~ 3 0 k VIl l um i na t i o nSo ur c eL i g ht E l e c t r o n E l e c t r o nObse r v a t i o n In A i r In V a c uu m In V a c uu mL e ns Gl a ss P o l e P i e c e P o l e P i e c eR e so l ut i o n 5 ~ 0 . 1 μ m 0 . 5 ~ 0 . 1 nm 7 ~ 0 . 6 nmF o c us D e pt h( X 5 0 0 )Sh a l l o w ( 2 ~ 3 μ m ) D e e p ( 5 0 0 μ m) D e e p ( 0 . 1 ~ 1 m m )x r a y s A na l y si s N o t po ssi bl e P o ssi bl e P o ssi bl e C o l o r C o l o r B l a c k a nd W hi t e B l a c k a nd W hi t eMa g ni f i c a t i o n ~ 1K ~ 1000K ~ 800KF i e l d o f V i e w L a r g e Sm a l l L a r g eS