【正文】 only provides support and reference for the relevant theoretical study, fills the gap between theory and experiment, but also is important for the application of CNTs in posite materials, nanoelectronics and NEMs, and strain resonance Raman spectroscopy of individual SWNTs under torsional and uniaxialstrain has been investigatedThe AFM manipulation can induce both torsional and uniaxial strains into the ultralong straight the longer propagation distance of uniaxial strain than the torsional strain, only pure uniaxial strain exists at region far from the manipulation at region close to the manipulation sites, both the two strains formation of torsional strain suggested the rolling of SWNT under the present AFM uniaxial and torsional strain can change the Raman vibrational was found that:(1)the RBM and Gband spectra responded differently to the two types of torsional strain, RBM frequency wRBM was found to upshift and one of the modes assigned to E2 symmetry in the G+ band, which occurs at ~1600 cm1(G+(E2(g))), downshifted significantly, whereas the rest Gmodes located in the range of 1590 cm1～1560 cm1 are slightly redshift of the(G+(E2(g)), ismuch larger that the buleshift of other G modes。關(guān)鍵詞：單壁碳納米管，AFM操縱與加工，形變，屈曲，共振拉曼光譜AFM Manipulation, Deformation and Related Raman Spectroscopy ofSingleWall Carbon NanotubesDuan XiaojieABSTRACTThe study on deformed carbon nanotubes(CNTs), including the study of their structure evolution and properties change under strain, is important not only for the application of CNTs in posite materials, strain sensors, nanoelectronic and nanoelectromechanical devices, but also for the development of related this thesis, we have developed controlled atomic force microscopy(AFM)manipulation techniques for singlewall carbon nanotubes(SWNTs)on this controlled AFM manipulation, the buckling behavior of CNTs under bending, and resonance Raman spectroscopy of SWNTs under torsional and uniaxial strains, have been main results are listed as followings: AFM manipulation techniques for SWNTs on surfaces have been developed By defining proper tip path, manipulation position on SWNT, and choosing optimal tip pressing distance, different kinds of deformation can be induced into deformation is stabilized by the interaction between SWNTs and get controlled AFM manipulation, a new kind of nanofabricationnanowelding has been invented based on the AFM oxidation of Si the Si substrate with SWNT on top of it is oxidized by the AFM tip, the newly formed SiOx will grow around the tube, effectively fixing that site of SWNT onto the Si existence of SWNT can enhance the oxidation of same oxidation condition, more SiOx can be produced with the presence of SWNT than the case where there is no is helpful for the intensity of the welding can be modulated by changing the oxidation voltage and the tip moving higher voltage and slower tip moving, stronger welding can be the thermal oxidation of SWNTs in air and the Raman characterization, it was found that this nanowelding has no obvious influence on the chemical structure of with this nanowelding, the magnitude and distribution of strain induced into SWNT by AFM manipulation can be well SWNT and Si can be oxidized when using stronger oxidation condition(much higher voltage and lower tip moving speed), thus the SWNT can be cut at well defined this AFM cutting, nanowelding and manipulation, plex SWNTbased structures can be constructed, proved the function of AFM as a buckling behavior of CNTs under bending has been studiedBy choosing proper manipulation site on SWNT, the length of the fragment which is being manipulated, manipulation path, and optimal tip pressing distance, the angle can be well controlled when SWNT is bent by AFM on this controlled bent of CNT by AFM manipulation, A CNT with a series of different bending angles has been interaction between manipulated SWNT fragment and substrate is largely decreased after the the effective bending region is located at the fragment where Only vdW interaction exists between it and the appears as the cross point between the fixed SWNT part andmanipulated SWNT part in the AFM v