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【正文】 dvt ntype vb= qss=1e10 = extract the surface conc under the channel. extract name=chan surf conc impurity=Net Doping \ material=Silicon =1 = structure mirror right electrode name=gate x= electrode name=source x= electrode name=drain x= electrode name=substrate backside structure outfile= tonyplot yaojinpeng_nmos*.str go atlas mesh infile= set material models models cvt srh print contact name=gate interface qf=2e10 method gummel newton solve init solve vgate= outfile=solve_tmp1 solve vgate= outfile=solve_tmp2 solve vgate= outfile=solve_tmp3 solve vgate= outfile=solve_tmp4 load infile=solve_tmp1 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp2 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp3 log outf= solve name=drain vdrain=0 vfinal= vstep= load infile=solve_tmp4 log outf= solve name=drain vdrain=0 vfinal= vstep= extract max current and saturation slope extract name=nidsmax max(i.drain) extract name=sat_slope slope(minslope(curve(v.drain,i.drain))) tonyplot overlay st nmos*.log quit 輸出特性曲線部分 go atlas mesh infile= set material models models cvt srh print contact name=gate interface qf=3e10 get initial solution solve init method newton trap solve prev Bias the drain a bit... solve vdrain= vstep= vfinal= name=drain solve vdrain= Ramp the gate to a volt... log outf= master solve vgate=0 vstep= vfinal= name=gate extract device parameters extract name=nvt(xintercept(maxslope(curve(abs(v.gate),abs(i.drain)))) abs(ave(v.drain))/) extract name=nbeta slope(maxslope(curve(abs(v.gate),abs(i.drain))))* ((ave(v.drain))) extract the device parameter SubVt... extract init inf= extract name=nsubvt (maxslope(curve(abs(v.gate),log10(abs(i.drain))))) tonyplot 。如果要生成 Vgs=， Vgs= 時(shí)的 IdVds 曲線數(shù)據(jù)，只要重復(fù)這三個(gè)語(yǔ)句即可。 抽取參數(shù) nvt= nbeta= nsubvt= (2)生成曲線族 要在 Vgs 分別為 ， ， 時(shí)生成 IdVds 曲線族， Vds 變化范圍為 0~。 extract name=nbeta slope(maxslo
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