eda課程設(shè)計報告n溝道m(xù)os管工藝模擬與器件模擬(參考版)
2024-10-11 08:06本頁面
【正文】 各關(guān)鍵工 藝對器件性能的影響 氧化工藝模擬 不同摻雜濃度對氧化速率的影響 （ 1） implant boron dose=3e15 energy=20 所得結(jié)果 ： EXTRACT extract name=toxlow thickness material=SiO~2 =1 = toxlow= angstroms ( um) = EXTRACT extract name=toxhigh thickness material=SiO~2 =1 = toxhigh= angstroms ( um) = （ 2） implant boron dose=3e17 energy=20 所得結(jié)果： EXTRACT extract name=toxlow thickness material=SiO~2 =1 = toxlow= angstroms ( um) = EXTRACT extract name=toxhigh thickness material=SiO~2 =1 = toxhigh= angstroms ( um) = （ 1）氧化層厚度對離子注入的影響 （ 2）離子注入劑量與雜質(zhì)分布的關(guān) 擴散工藝模擬 不同擴散模型的選擇對模擬結(jié)的影響 氧化對擴散工藝的影響 附錄： 實 驗程序 go athena 定義網(wǎng)格 X line x loc= spac= line x loc= spac= line x loc= spac= line x loc= spac= 定義網(wǎng)格 Y line y loc= spac= line y loc= spac= line y loc= spac= line y loc= spac= InitialSiliconStructurewith100Orientation初始硅的 100晶向 ,P型襯底 init silicon =4e14 orientation=100 =2 structure outfile= GateOxidation柵氧化 diffus time=12 temp=910 dryo2 press= =3 structure outfile= Extract a design parameter抽取設(shè)計參數(shù) extract name=gateox thickness oxide =1 = vt adjust implant 閾值電壓調(diào)整注入 implant boron dose=2e12 energy=10 pearson structure outfile= depo poly thick= divi=10 structure outfile= 柵刻蝕 etch poly left = structure outfile= 多晶硅氧化 method fermi press diffuse time=3 temp=920 weto2 press= structure outfile= 多晶摻雜 implant phosphor dose= energy=15 pearson structure outfile= depo oxide thick= divisions=8 structure outfile= etch oxide dry thick= structure outfile= implant arsenic dose= energy=30 pearson structure outfile= method fermi press diffuse time=1 temp=900 nitro press= structure outfile= pattern s/d contact metal etch oxide left = deposit alumin thick= divi=2 etch alumin right = structure outfile= Extract design parameters extract final S/D Xj extract name=nxj xj silicon =1 = =1 extract the N++ regions sheet resistance extract name=n++ sheet rho material=Silicon =1 = =1 extract the long chan Vt extract name=n1dvt 1
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