基本單元電路6(編輯修改稿)
2025-10-22 23:28 本頁面
【文章內(nèi)容簡介】 ollector resistances Increasing the current capabilities ?Increasing the current carrying capabilities of the BJT is achieved by: ? Scaling the device size vertically ? Increasing the number of fingers Modeling the BiCMOS BJT ?Because the pbase layer and the nwell layers are relatively low doped, resistivity in these layers leads to a significant Rb and Rc ponents. The Basic BiCMOS Inverter ?When input is High ? M4 turns OFF while M3 turns ON pulling the base of Q2 to ground. ? M1 turns OFF while M2 turns ON biasing the base of Q1 with the charge stored in Cload. ? Q1 turns On until Cload is discharged to ground. ? Output=‘0’ ?When input is low ? M4
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