常用電子元器件的認(rèn)識(shí)(完整版)
【正文】 for automatic insertion ESR is minimized.(3) Metallized Polyester Film Capacitor (金屬化聚乙烯膜電容器) High moisture resistance. Good solderability. Noninductive construction and sellhealing property.(4) Polypropylene Film Capacitor (聚丙烯膜電容器) Low dissipation factor and high insulation resistance. High stability of capacitance and DF VS temperature and frequency. Low equivalent series resistance. Noninductive construction8. X電容9. Y電容(英文Choke 即線圈)1. 電路符號(hào)(普通電感無(wú)極性)2. 主要參數(shù)(1) 電感量及允許偏差(2) 品質(zhì)因子(Q值) 感抗xL=WL=2πfL Q=2πfL/R Q即為品質(zhì)因子3. 種類可分為固定電感器,帶磁心電感線圈,可變電感器 (英文 Diode)DIODETest Description1VFForward voltage2IRReverse current leakage3BVRBreakdown voltage1. 電路符號(hào)┼▔2. 單向?qū)щ娦? 二極管只能一個(gè)方向流過(guò)電流,~,~,即二極管正向壓降基本保持不變,當(dāng)外加正向電壓達(dá)到一定程度,二極管正向電流會(huì)很大,二極管的反向電流很小,即反向時(shí)二極管的內(nèi)阻很大,二極管會(huì)反向擊穿. 是由一個(gè)P型半導(dǎo)體和一個(gè)N型半導(dǎo)體構(gòu)成,組成一個(gè)PN結(jié),PN結(jié)具有單向?qū)щ娦?(1)普通二極管 (2)發(fā)光二極管 (3)穩(wěn)壓二極管 (4)變?nèi)荻O管 (6)肖特基二極管 (1) 最大平均整流電流IF: 個(gè)周期內(nèi)的平均電流值不能超過(guò)IF,否則二極管將會(huì)燒壞.(2) 最大反向工作電壓VR(3) 反向電流IR:是在最大反向工作電壓下的二極管反向電流值(4) 工作頻率:表示二極管在高頻下的單向?qū)щ娦阅?ZENERTest Description1VFForward voltage2BVZMinimum Zener voltage.(Use test 5)3BVZMaximum Zener voltage.(Use test 5)4IRReverse current leakage5BVZBVz with programmable soak6ZZ1 KHz Zener Impedance(requires ZZ1000 or Model 5310)IiU (圖一) (圖二) 從(圖二)穩(wěn)壓特性曲線可以看出,當(dāng)穩(wěn)壓管反向擊穿后,流過(guò)二極管的工作電流發(fā)生很大變化時(shí),穩(wěn)壓二極管的電壓降壓V2基本不變,那么穩(wěn)壓管處于截止?fàn)顟B(tài),即開(kāi)路.3. 主要參數(shù)(1) 穩(wěn)定電壓(2) 穩(wěn)定電流:穩(wěn)壓管工作對(duì)參考電流值,電流小于該值,穩(wěn)壓效果會(huì)略差 些.(3) 額定功率損耗(4) 電壓溫度系數(shù)(5) 動(dòng)態(tài)電阻(又稱晶體三極管) TRANSISTORTest Description1hFEForwardcurrent transfer ratio2VBEBase emitter voltage(see also Appendix F)3IEBOEmitter to base cutoff current 4VCESATSaturation voltage5ICBOCollector to base cutoff current6ICEOCollector to emiter cutoff currentICER,with base to emiter load,ICEX,reverse bias,orICESshort(see also Appendix F)7BVCEOBreakdown voltage,collector to emitter,BVCERwith base to emiter load,BVCEXreverse bias,orBVCESshort(see also Appendix F)8BVCBOBreakdown voltage,collector to base9BVEBOBreakdown voltage,emitter to base10VBESATBase emitter saturation voltage ICc (a)NPN (b)PNP
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